InGaN/GaN multiple quantum well solar cells with long operating wavelengths
نویسندگان
چکیده
We report on the fabrication and photovoltaic characteristics of InGaN solar cells by exploiting InGaN/GaN multiple quantum wells MQWs with In contents exceeding 0.3, attempting to alleviate to a certain degree the phase separation issue and demonstrate solar cell operation at wavelengths longer than previous attainments 420 nm . The fabricated solar cells based on In0.3Ga0.7N /GaN MQWs exhibit an open circuit voltage of about 2 V, fill factor of about 60%, and an external efficiency of 40% 10% at 420 nm 450 nm . © 2009 American Institute of Physics. DOI: 10.1063/1.3081123
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